Programmable Charge Storage Transistor, An Array Of Elevationally Extending Strings Of Memory Cells, And A Method Of Forming An Array Of Elevationally Extending Strings Of Memory Cells

ABSTRACT

A programmable charge-storage transistor comprises channel material, insulative charge-passage material, charge-storage material, a control gate, and charge-blocking material between the charge-storage material and the control gate. The charge-blocking material comprises a non-ferroelectric insulator material and a ferroelectric insulator material. Arrays of elevationally-extending strings of memory cells of memory cells are disclosed, including methods of forming such. Other embodiments, including method, are disclosed.

TECHNICAL FIELD

Embodiments disclosed herein pertain to programmable charge-storagetransistors, to arrays of elevationally-extending strings of memorycells, and to methods of forming an array of elevationally-extendingstrings of memory cells.

BACKGROUND

Memory is one type of integrated circuitry, and is used in computersystems for storing data. Memory may be fabricated in one or more arraysof individual memory cells. Memory cells may be written to, or readfrom, using digit lines (which may also be referred to as bit lines,data lines, or sense lines) and access lines (which may also be referredto as word lines). The sense lines may conductively interconnect memorycells along columns of the array, and the access lines may conductivelyinterconnect memory cells along rows of the array. Each memory cell maybe uniquely addressed through the combination of a sense line and anaccess line.

Memory cells may be volatile, semi-volatile, or non-volatile.Non-volatile memory cells can store data for extended periods of time inthe absence of power. Non-volatile memory is conventionally specified tobe memory having a retention time of at least about 10 years. Volatilememory dissipates, and is therefore refreshed/rewritten to maintain datastorage. Volatile memory may have a retention time of milliseconds orless. Regardless, memory cells are configured to retain or store memoryin at least two different selectable states. In a binary system, thestates are considered as either a “O” or a “1”. In other systems, atleast some individual memory cells may be configured to store more thantwo levels or states of information.

A field effect transistor is one type of electronic component that maybe used in a memory cell. These transistors comprise a pair ofconductive source/drain regions having a semiconductive channel regionthere-between. A conductive gate is adjacent the channel region andseparated there-from by a thin gate insulator. Application of a suitablevoltage to the gate allows current to flow from one of the source/drainregions to the other through the channel region. When the voltage isremoved from the gate, current is largely prevented from flowing throughthe channel region. Field effect transistors may also include additionalstructure, for example a reversibly programmable charge-storage regionas part of the gate construction between the gate insulator and theconductive gate.

Flash memory is one type of memory, and has numerous uses in moderncomputers and devices. For instance, modern personal computers may haveBIOS stored on a flash memory chip. As another example, it is becomingincreasingly common for computers and other devices to utilize flashmemory in solid state drives to replace conventional hard drives. As yetanother example, flash memory is popular in wireless electronic devicesbecause it enables manufacturers to support new communication protocolsas they become standardized, and to provide the ability to remotelyupgrade the devices for enhanced features.

NAND may be a basic architecture of integrated flash memory. A NAND cellunit comprises at least one selecting device coupled in series to aserial combination of memory cells (with the serial combination commonlybeing referred to as a NAND string). NAND architecture may be configuredin a three-dimensional arrangement comprising vertically-stacked memorycells individually comprising a reversibly programmable verticaltransistor.

Charge-storage regions of programmable field effect transistors areprogrammed (written to by storing charge therein) and erased (removingthe stored charge) by applying suitable respective program and erasevoltages at least to the conductive gate. Higher programming and erasevoltages are desired as such may provide more assurance that the desiredeffect (i.e., program or erase) is achieved as compared to lowervoltages, and which may reduce time to program and/or erase.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic cross-sectional view of a programmablecharge-storage transistor in accordance with an embodiment of theinvention.

FIG. 2 is a diagrammatic cross-sectional view of a programmablecharge-storage transistor in accordance with an embodiment of theinvention.

FIG. 3 is a diagrammatic cross-sectional view of a programmablecharge-storage transistor in accordance with an embodiment of theinvention.

FIG. 4 is a diagrammatic cross-sectional view of a programmablecharge-storage transistor in accordance with an embodiment of theinvention.

FIG. 5 is a diagrammatic cross-sectional view of a programmablecharge-storage transistor in accordance with an embodiment of theinvention.

FIG. 6 is a diagrammatic cross-sectional view of a programmablecharge-storage transistor in accordance with an embodiment of theinvention.

FIG. 7 is a diagrammatic cross-sectional view of a portion of an arrayof elevationally-extending strings of memory cells in accordance with anembodiment of the invention.

FIG. 8 is a view taken through line 8-8 in FIG. 7.

FIG. 9 is a diagrammatic cross-sectional view of a portion of an arrayof elevationally-extending strings of memory cells in accordance with anembodiment of the invention.

FIG. 10 is a diagrammatic cross-sectional view of a portion of an arrayof elevationally-extending strings of memory cells in accordance with anembodiment of the invention.

FIG. 11 is a diagrammatic cross-sectional view of a portion of an arrayof elevationally-extending strings of memory cells in accordance with anembodiment of the invention.

FIG. 12 is a diagrammatic cross-sectional view of a portion of asubstrate in process in accordance with an embodiment of the invention.

FIG. 13 is a view of the FIG. 12 substrate at a processing stepsubsequent to that shown by FIG. 12.

FIG. 14 is a view of the FIG. 13 substrate at a processing stepsubsequent to that shown by FIG. 13.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Embodiments of the invention encompass programmable charge-storagetransistors, arrays of elevationally-extending strings of memory cells,and methods of forming an array of elevationally-extending strings ofmemory cells. A first example embodiment is shown in FIG. 1, whichcomprises a substrate or substrate fragment 100 having a base substrate104 within and over which a programmable charge-storage transistor 102is shown. Base substrate 104 may comprise a semiconductor substrate. Inthis document, the term “semiconductor substrate” or “semiconductivesubstrate” is defined to mean any construction comprising semiconductivematerial, including, but not limited to, bulk semiconductive materialssuch as a semiconductive wafer (either alone or in assemblies comprisingother materials thereon), and semiconductive material layers (eitheralone or in assemblies comprising other materials). The term “substrate”refers to any supporting structure, including, but not limited to, thesemiconductive substrates described above. Substrate 104 would, by wayof example, be part of a larger substrate, for example a semiconductorwafer.

Transistor 102 comprises an example gate construction 101, examplechannel material 42, and example source/drain regions 103 and 105.Regions 103 and 105 and material 42 may comprise semiconductor material(e.g., silicon) having suitable conductivity-type and concentration ofconductivity-modifying impurities therein to enable current to flowalong example straight-line direction 31 of current flow in channelmaterial 42 based upon selected operation of transistor gateconstruction 101. As examples, source/drain regions 103, 105 may besuitably conductively doped with conductivity-increasing dopant of onetype and channel material 42 may doped to a lesser concentration with animpurity of another conductivity type. Additional regions may beincluded (not shown), for example LDD and/or halo regions.

Transistor gate construction 101 comprises insulative charge-passagematerial 40 (e.g., a bandgap-engineered structure havingnitrogen-containing material such as silicon nitride sandwiched betweentwo insulating oxides such as silicon dioxide), charge-storage material34 (e.g., floating gate material such as doped or undoped silicon, orcharge-trapping material such as silicon nitride, metal dots, etc.), acontrol gate 28 (e.g., comprising conductive control-gate material 22such as elemental metals, metal material, andconductively-doped-semiconductive materials, including mixturesthereof), and charge-blocking material 32 between charge-storagematerial 34 and control gate 28. Charge-blocking material 32 comprises anon-ferroelectric insulator material 17 and a ferroelectric insulatormaterial 15. In one embodiment and as shown, ferroelectric insulatormaterial 15 and non-ferroelectric insulator material 17 are directlyagainst one another, and in one embodiment ferroelectric insulatormaterial 15 is thinner than non-ferroelectric insulator material 17.Regardless, an example thickness for ferroelectric insulator material 15is 10 to 100 Angstroms, with 20 to 50 Angstroms being ideal. Examplethicknesses for each of materials 40, 34 17, and 22 are 30 to 250Angstroms. Example non-ferroelectric insulator materials are silicondioxide and/or silicon nitride (e.g., silicon nitride sandwiched betweentwo layers of silicon dioxide). Example ferroelectric insulators includemetal oxide-comprising materials comprising one or more of transitionmetal oxide, zirconium, zirconium oxide, hafnium, hafnium oxide, leadzirconium titanate, tantalum oxide, strontium oxide, strontium titaniumoxide, titanium oxide, and barium strontium titanate, and which may havedopant therein which comprises one or more of silicon, aluminum,lanthanum, yttrium, erbium, calcium, magnesium, strontium, lutetium,dysprosium, gadolinium, praseodymium, chromium, niobium, tantalum,hafnium, zirconium, vanadium manganese, cobalt, nickel, carbon and anyother rare earth element. One particular example is a hafnium andzirconium based oxide having suitable dopant therein. Other examplesinclude a hafnium and silicon based oxide having suitable dopanttherein; a yttrium and zirconium based oxide having suitable dopanttherein; and a hafnium, silicon, and zirconium based oxide.

In one embodiment, non-ferroelectric insulator material 17 is closer tocharge-storage material 34 then is ferroelectric material 15, in oneembodiment ferroelectric insulator material 15 is directly againstcontrol gate 28, and in one embodiment non-ferroelectric insulatormaterial 17 is directly against charge-storage material 34. Any otherattribute(s) or aspect(s) as shown and/or described herein with respectto other embodiments may be used.

FIG. 2 shows an alternate example programmable charge-storage transistor102 a of a substrate 100 a comprising a gate construction 101 a havingcharge-blocking material 32 a. Like numerals from the above-describedembodiments have been used where appropriate, with some constructiondifferences being indicated with the suffix “a”. In construction 101 a,and in one embodiment, ferroelectric insulator material 15 is closer tocharge-storage material 34 than is non-ferroelectric insulator material17, in one embodiment non-ferroelectric insulator material 17 isdirectly against control gate 28, and in one embodiment ferroelectricinsulator material 15 is directly against charge-storage material 34.Any other attribute(s) or aspect(s) as shown and/or described hereinwith respect to other embodiments may be used.

FIG. 3 shows an alternate example programmable charge-storage transistor102 b of a substrate 100 b comprising a gate construction 101 b havingcharge-blocking material 32 b. Like numerals from the above-describedembodiments have been used where appropriate, with some constructiondifferences being indicated with the suffix “b” or with differentnumerals. Ferroelectric insulator material 15 in charge-blockingmaterial 32 b is sandwiched between two regions 37, 39 ofnon-ferroelectric insulator material 17 along a direction that isparallel straight-line direction 31 of current flow in channel material42. Example thicknesses for each of regions 37, 39 and material 15 is 10to 100 Angstroms. In one embodiment and as shown, ferroelectricinsulator material 15 is directly against non-ferroelectric insulatormaterial 17 of each of two regions 37, 39. Any other attribute(s) oraspect(s) as shown and/or described herein with respect to otherembodiments may be used.

FIG. 4 shows an alternate example programmable charge-storage transistor102 c of a substrate 100 c comprising a gate construction 101 c havingcharge-blocking material 32 c. Like numerals from the above-describedembodiments have been used where appropriate, with some constructiondifferences being indicated with the suffix “c”. Non-ferroelectricinsulator material 17 of charge-blocking material 32 c is sandwichedbetween two regions 37, 39 of ferroelectric insulator material 15 alonga direction that is parallel straight-line direction 31 of current flowin channel material 42. In one embodiment and as shown,non-ferroelectric insulator material 17 is directly againstferroelectric insulator material 15 in each of two regions 37, 39. Anyother attribute(s) or aspect(s) as shown and/or described herein withrespect to other embodiments may be used.

FIGS. 1-4 show example embodiments wherein ferroelectric insulatormaterial 15 is continuous between edges 33, 35 of control gate 28parallel straight-line direction 31 of current flow in channel material42. Alternately, such ferroelectric insulator material may bediscontinuous between those edges. Such an example embodiment is shownin FIG. 5 with respect to a programmable charge-storage transistor 102 dof a substrate 100 d comprising a gate construction 101 d havingcharge-blocking material 32 d. Like numerals from the above-describedembodiments have been used where appropriate, with some constructiondifferences being indicated with the suffix “d”. Charge-blockingmaterial 32 d is shown with ferroelectric insulator material 15 beingdiscontinuous between edges 33, 35 of control gate 28 parallelstraight-line direction 31 of current flow in channel material 42. Onlytwo example spaced segments of ferroelectric insulator material 15 areshown, although more may be formed and variously positioned. In oneembodiment and as shown, non-ferroelectric insulator material 17 islaterally between the discontinuous segments of ferroelectric insulatormaterial 15. Any other attribute(s) or aspect(s) as shown and/ordescribed herein with respect to other embodiments may be used.

FIGS. 1-5 show examples wherein transistor 102/102 a/102 b/102 c/102 dis horizontal or within 10° of horizontal. Alternately, a programmablecharge-storage transistor may be fabricated to beelevationally-extending or other than elevationally-extending. FIG. 6shows an example programmable charge-storage transistor 102 e of asubstrate 100 e that extends elevationally, with the particularlydepicted embodiment transistor 102 e being vertical or within 10° ofvertical. Like numerals from the above-described embodiments have beenused where appropriate, with some construction differences beingindicated with the suffix “e” or with different numerals. Channelmaterial 42 e in the example embodiment of FIG. 6 is shown as beingsandwiched between insulative charge-passage material 40 e and a backingdielectric material 50 (e.g., silicon dioxide and/or silicon nitride).Source/drain regions are not specifically shown in FIG. 6, for exampleas might occur with respect to an elevationally-extending string ofmemory cells wherein source/drain regions are provided at a top and abottom of a stack of such memory cells, for example as will be describedbelow. Dielectric material 27 (e.g., silicon dioxide and/or siliconnitride) is above and below gate construction 101 e. Any otherattribute(s) or aspect(s) as shown and/or described herein with respectto other embodiments may be used.

An embodiment of the invention comprises an array ofelevationally-extending strings of memory cells, for example as shown inFIGS. 7 and 8. Like numerals from the above-described embodiments havebeen used where appropriate, with some construction differences beingindicated with the suffix “f” or with different numerals. A construction10 comprises a base substrate 11 that may include any one or more ofconductive/conductor/conducting (i.e., electrically herein),semiconductive/semiconductor/semiconducting, orinsulative/insulator/insulating (i.e., electrically herein) materials.Various materials have been formed elevationally over base substrate 11.Materials may be aside, elevationally inward, or elevationally outwardof the FIGS. 7 and 8-depicted materials. For example, other partially orwholly fabricated components of integrated circuitry may be providedsomewhere above, about, or within base substrate 11. Control and/orother peripheral circuitry for operating components within an array ofelevationally-extending strings of memory cells may also be fabricated,and may or may not be wholly or partially within such an array orsub-array. Further, multiple sub-arrays may also be fabricated andoperated independently, in tandem, or otherwise relative one another. Inthis document, a “sub-array” may also be considered as an array.

Construction 10 comprises an array 12 of elevationally-extending strings44 of memory cells 30. Only a single string 44 is shown, although likelyhundreds, thousands, tens of thousands, etc. of such strings will be inarray 12. Approximate locations of memory cells 30 are indicated withbrackets in FIG. 7 and with a dashed outline in FIG. 8, with memorycells 30 being essentially ring-like or annular in the depicted example.Array 12 comprises a vertical stack 16 of alternating insulative tiers19 and wordline tiers 20. Example tiers 20 comprise conductivecontrol-gate material 22 having terminal ends 26 corresponding tocontrol-gate regions 28 of individual memory cells 30. Control-gateregions 28 may be part of individual control-gate lines 29 (only onebeing shown and numerically designated in FIG. 8) that interconnectmultiple memory cells of multiple strings of memory cells withinindividual wordline tiers 20 in a row direction. Dielectric material 23(FIG. 8; e.g., silicon dioxide and/or silicon nitride) is laterallybetween control-gate lines 29. Array 12 is shown as having sevenvertically-alternating tiers 19, 20 in FIG. 7, although fewer or likelymany more (e.g., dozens, hundreds etc.) may be formed. Accordingly, moretiers 19 and 20 may be above and/or below the depicted tiers. Tiers 19and 20 may be of any suitable vertical thickness(es) and may have thesame or different vertical thickness(es) relative one another. As anexample, tiers 19 and 20 may have respective thicknesses of about 10nanometers (nm) to 300 nm. Channel openings 13 extend throughalternating tiers 19, 20, with only one channel opening 13 being shownwith respect to a single elevationally-extending string 44 of memorycells 30.

Charge-storage material 34 f of individual memory cells 30 extendselevationally along individual control-gate regions 28. Charge-blockingmaterial 32 f (i.e., a charge block) extends elevationally alongindividual control-gate regions 28 between charge-storage material 34 fand individual control-gate regions 28. Charge-blocking material 32 fcomprises non-ferroelectric insulator material 17 and ferroelectricinsulator material 15. Transistor channel material 42 f of individualmemory cells 30 extends elevationally along charge-storage material 34f. Insulative charge-passage material 40 f extends elevationally alongcharge-storage material 34 f between transistor channel material 42 fand charge-storage material 34 f. Example memory cell string 44 is shownas comprising radially-central solid dielectric material 50 (e.g.,spin-on-dielectric, silicon dioxide, and/or silicon nitride).Alternately, and by way of example only, the radially-central portion ofmemory cell string 44 may include void space(s) (not shown) and/or bedevoid of solid material (not shown).

A charge block may have the following functions in a memory cell: In aprogram mode, the charge block may prevent charge carriers from passingout of the charge-storage material (e.g., floating-gate material,charge-trapping material, etc.) toward the control gate, and in an erasemode the charge block may prevent charge carriers from flowing into thecharge-storage material from the control gate. Accordingly, a chargeblock may function to block charge migration between the control-gateregion and the charge-storage material of individual memory cells.

Alternate existing or yet-to-be developed constructions may be used. Forexample, multiple memory cells may be formed about a single string in anindividual wordline tier 20, for example by bifurcating the FIG.8-depicted control-gate line 29 longitudinally down its middle (notshown) thus creating two memory cells (not shown) that may be separatelycontrolled if such bifurcated control-gate lines are separatelycontrollable.

Any other attribute(s) or aspect(s) as shown and/or described hereinwith respect to other embodiments may be used.

FIGS. 7 and 8 show an example embodiment wherein ferroelectricinsulating material 15 and non-ferroelectric insulating material 17 areeach directly above and directly below charge-storage material 34 f inindividual memory cells 30, and also where non-ferroelectric insulatingmaterial 17 is directly against a top 41 and a bottom 43 ofcharge-storage material 34 f in individual memory cells 30. An alternateembodiment example elevationally-extending string 44 of memory cells 30is shown in FIG. 9. Like numerals from the above-described embodimentshave been used where appropriate, with some construction differencesbeing indicated with the suffix “g”. FIG. 9 also shows an embodimentwherein each of ferroelectric insulating material 15 andnon-ferroelectric insulating material 17 is directly above and directlybelow charge-storage material 34 f in individual memory cells 30, butwherein ferroelectric insulating material 15 is directly against tops 41and bottoms 43 of the charge-storage material. Any other attribute(s) oraspect(s) as shown and/or described herein with respect to otherembodiments may be used.

FIG. 10 shows an alternate example elevationally-extending string 44 hof memory cells 30 with respect to a construction 10 h. Like numeralsfrom the above-described embodiments have been used where appropriate,with some construction differences being indicated with the suffix “h”.Ferroelectric insulating material 15 is neither directly above nordirectly below charge-storage material 34 h in individual memory cells30. Additionally, FIG. 10 shows an embodiment wherein non-ferroelectricinsulating material 17 is neither directly above nor directly belowcharge-storage material 34 g in individual memory cells 30. Any otherattribute(s) or aspect(s) as shown and/or described herein with respectto other embodiments may be used.

Another alternate embodiment elevationally-extending string 44 j ofmemory cells 30 is shown in FIG. 11 with respect to a construction 10 j.Like numerals from the above-described embodiments have been used whereappropriate, with some construction differences being indicated with thesuffix “j”. Ferroelectric insulating material 15 of charge-storagematerial 34 f is directly above and directly below control-gate material22 in individual memory cells 30, and in one embodiment is directlyagainst a top 47 and a bottom 49 of control-gate material 22 inindividual memory cells 30. Any other attribute(s) or aspect(s) as shownand/or described herein with respect to other embodiments may be used.

Ferroelectric insulator material used as disclosed herein may exhibitnegative capacitance whereby the transistor may exhibit favorableproperties of low effective oxide thickness that may lead to fasterprogramming and erase.

An embodiment of the invention encompasses a method of forming an arrayof elevationally-extending strings of memory cells, for example as shownin the construction of FIG. 11. Such is shown and described withreference to FIGS. 12-14. Like numerals from the above-describedembodiments have been used where appropriate, with like numerals beingused for predecessor constructions and materials. Referring to FIG. 12,a predecessor stack 16 comprises vertically-alternating tiers 19, 20 ofdifferent composition first material 24 and second material 21. Firstmaterial 24 is insulative (e.g., silicon dioxide). An example secondmaterial is silicon nitride, and which may be wholly or partiallysacrificial. Elevationally-extending channel openings 13 have beenformed into alternating tiers 19, 20.

Referring to FIG. 13, first charge-blocking insulator material 75 hasbeen formed in channel openings 13 elevationally along alternating tiers19, 20. Charge-storage material 34 h has been forming in channelopenings 13 elevationally along alternating tiers 19, 20 and firstcharge-blocking insulator material 75. Insulative charge-passagematerial 40 has been formed in channel openings 13 elevationally alongalternating tiers 19, 20 and charge-storage material 34 h. Transistorchannel material 42 has been formed in channel openings 13 elevationallyalong alternating tiers 19, 20 and insulative charge-passage material40. Example radially-central dielectric material 50 has also beenformed.

Referring to FIG. 14, at least some of second material 21 (in oneembodiment all, with thereby none of second material 21 being shown inFIG. 14) has been removed from stack 16. Thereafter, secondcharge-blocking insulator material 77 has been formed laterallyproximate first charge-blocking insulator material 75. Secondcharge-blocking insulator material 77 is of different composition fromthat of first charge-blocking insulator material 75. One of firstcharge-blocking insulator material 75 or second charge-blockinginsulator material 77 comprises a non-ferroelectric insulator material,while the other of first charge-blocking insulator material 75 or secondcharge-blocking insulator material 77 comprises a ferroelectricinsulator material. Examples include those described above. Subsequentprocessing may occur, whereby for example control-gate material 22 isformed laterally over second charge-blocking insulator material 77, withsuch control-gate material having terminal ends 26 corresponding tocontrol-gate regions 28 of individual memory cells 30, for example asshown in a finished construction of FIG. 11.

In one embodiment, the first charge-blocking insulator material isformed to comprise the non-ferroelectric insulator material, and thesecond charge-blocking insulator material is formed to comprise theferroelectric insulator material. In one such embodiment, theferroelectric insulating material is directly above and directly belowthe control-gate material in the individual memory cells in a finishedconstruction, and in one such embodiment the ferroelectric insulatingmaterial is directly against a top and a bottom of the control-gatematerial in the individual memory cells in a finished construction. Inone embodiment, the first charge-blocking insulator material is formedto comprise the ferroelectric insulator material, and the secondcharge-blocking insulator material is formed to comprise thenon-ferroelectric insulator material. In one embodiment, the secondcharge-blocking insulator material is formed directly against the firstcharge-blocking insulator material.

Any other attribute(s) or aspect(s) as shown and/or described hereinwith respect to other embodiments may be used.

In this document unless otherwise indicated, “elevational”, “higher”,“upper”, “lower”, “top”, “atop”, “bottom”, “above”, “below”, “under”,“beneath”, “up”, and “down” are generally with reference to the verticaldirection. “Horizontal” refers to a general direction (i.e., within 10degrees) along a primary substrate surface and may be relative to whichthe substrate is processed during fabrication, and vertical is adirection generally orthogonal thereto. Reference to “exactlyhorizontal” is the direction along the primary substrate surface (i.e.,no degrees there-from) and may be relative to which the substrate isprocessed during fabrication. Further, “vertical” and “horizontal” asused herein are generally perpendicular directions relative one anotherand independent of orientation of the substrate in three-dimensionalspace. Additionally, “elevationally-extending” and “extend(ing)elevationally” refer to a direction that is angled away by at least 45°from exactly horizontal. Further, “extend(ing) elevationally”,“elevationally-extending”, extend(ing) horizontally, andhorizontally-extending with respect to a field effect transistor arewith reference to orientation of the transistor's channel length alongwhich current flows in operation between the source/drain regions. Forbipolar junction transistors, “extend(ing) elevationally”“elevationally-extending”, extend(ing) horizontally, andhorizontally-extending, are with reference to orientation of the baselength along which current flows in operation between the emitter andcollector.

Further, “directly above” and “directly under” require at least somelateral overlap (i.e., horizontally) of two statedregions/materials/components relative one another. Also, use of “above”not preceded by “directly” only requires that some portion of the statedregion/material/component that is above the other be elevationallyoutward of the other (i.e., independent of whether there is any lateraloverlap of the two stated regions/materials/components). Analogously,use of “under” not preceded by “directly” only requires that someportion of the stated region/material/component that is under the otherbe elevationally inward of the other (i.e., independent of whether thereis any lateral overlap of the two stated regions/materials/components).

Any of the materials, regions, and structures described herein may behomogenous or non-homogenous, and regardless may be continuous ordiscontinuous over any material which such overlie. Further, unlessotherwise stated, each material may be formed using any suitable oryet-to-be-developed technique, with atomic layer deposition, chemicalvapor deposition, physical vapor deposition, epitaxial growth, diffusiondoping, and ion implanting being examples.

Additionally, “thickness” by itself (no preceding directional adjective)is defined as the mean straight-line distance through a given materialor region perpendicularly from a closest surface of animmediately-adjacent material of different composition or of animmediately-adjacent region. Additionally, the various materials orregions described herein may be of substantially constant thickness orof variable thicknesses. If of variable thickness, thickness refers toaverage thickness unless otherwise indicated, and such material orregion will have some minimum thickness and some maximum thickness dueto the thickness being variable. As used herein, “different composition”only requires those portions of two stated materials or regions that maybe directly against one another to be chemically and/or physicallydifferent, for example if such materials or regions are not homogenous.If the two stated materials or regions are not directly against oneanother, “different composition” only requires that those portions ofthe two stated materials or regions that are closest to one another bechemically and/or physically different if such materials or regions arenot homogenous. In this document, a material, region, or structure is“directly against” another when there is at least some physical touchingcontact of the stated materials, regions, or structures relative oneanother. In contrast, “over”, “on”, “adjacent”, “along”, and “against”not preceded by “directly” encompass “directly against” as well asconstruction where intervening material(s), region(s), or structure(s)result(s) in no physical touching contact of the stated materials,regions, or structures relative one another.

Herein, regions-materials-components are “electrically coupled” relativeone another if in normal operation electric current is capable ofcontinuously flowing from one to the other, and does so predominately bymovement of subatomic positive and/or negative charges when such aresufficiently generated. Another electronic component may be between andelectrically coupled to the regions-materials-components. In contrast,when regions-materials-components are referred to as being “directlyelectrically coupled”, no intervening electronic component (e.g., nodiode, transistor, resistor, transducer, switch, fuse, etc.) is betweenthe directly electrically coupled regions-materials-components.

Additionally, “metal material” is any one or combination of an elementalmetal, a mixture or an alloy of two or more elemental metals, and anyconductive metal compound.

CONCLUSION

In some embodiments, a programmable charge-storage transistor compriseschannel material, insulative charge-passage material, charge-storagematerial, a control gate, and charge-blocking material between thecharge-storage material and the control gate. The charge-blockingmaterial comprises a non-ferroelectric insulator material and aferroelectric insulator material.

In some embodiments, a programmable charge-storage transistor compriseschannel material extending vertically or within 10° of vertical,insulative charge-passage material, charge-storage material, a controlgate, and charge-blocking material between the charge-storage materialand the control gate. The charge-blocking material comprises anon-ferroelectric insulator material and a ferroelectric insulatormaterial. The ferroelectric insulator material and the non-ferroelectricare directly against one another. The ferroelectric insulator materialis thinner than the non-ferroelectric insulator material.

In some embodiments, an array of elevationally-extending strings ofmemory cells comprises a stack comprising vertically-alternatinginsulative tiers and wordline tiers. The wordline tiers comprisescontrol-gate material having terminal ends corresponding to control-gateregions of individual memory cells. Charge-storage material of theindividual memory cells extends elevationally along individual of thecontrol-gate regions. Charge-blocking material of the individual memorycells extends elevationally along the individual control-gate regionsbetween the charge-storage material and the individual control-gateregions. The charge-blocking material comprises a non-ferroelectricinsulator material and a ferroelectric insulator material. Transistorchannel material of the individual memory cells extends elevationallyalong the charge-storage material. Insulative charge-passage materialextends elevationally along the charge-storage material between thetransistor channel material and the charge-storage material.

In some embodiments, a method of forming an array ofelevationally-extending strings of memory cells comprises forming astack comprising vertically-alternating tiers of different compositionfirst and second materials. The first material is insulative.Elevationally-extending channel openings are formed into the alternatingtiers. First charge-blocking insulator material is formed in the channelopenings elevationally along the alternating tiers. Charge-storagematerial is formed in the channel openings elevationally along thealternating tiers and the first charge-blocking insulator material.Insulative charge-passage material is formed in the channel openingselevationally along the alternating tiers and the charge-storagematerial. Transistor channel material is formed in the channel openingselevationally along the alternating tiers and the insulativecharge-passage material. At least some of the second material is removedfrom the stack. Second charge-blocking insulator material is formedlaterally proximate the first charge-blocking insulator material. Thesecond charge-blocking insulator material is of different compositionfrom that of the first charge-blocking insulator material. One of thefirst charge-blocking insulator material or the second charge-blockinginsulator material comprises a non-ferroelectric insulator material. Theother of the first charge-blocking insulator material or the secondcharge-blocking insulator material comprises a ferroelectric insulatormaterial. Control-gate material is formed laterally over the secondcharge-blocking insulator material. The control-gate material hasterminal ends corresponding to control-gate regions of individual memorycells.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A programmable charge-storage transistor comprising: channelmaterial; insulative charge-passage material; charge-storage material; acontrol gate; and charge-blocking material between the charge-storagematerial and the control gate, the charge-blocking material comprising:a non-ferroelectric insulator material; and a ferroelectric insulatormaterial.
 2. The transistor of claim 1 wherein the ferroelectricinsulator material and the non-ferroelectric insulator material aredirectly against one another.
 3. The transistor of claim 1 wherein theferroelectric insulator material is thinner than the non-ferroelectricinsulator material.
 4. The transistor of claim 1 wherein theferroelectric insulator material has thickness of 10 to 100 Angstroms.5. The transistor of claim 1 wherein the ferroelectric insulatormaterial is continuous between edges of the control gate parallel astraight-line direction of current flow in the channel material.
 6. Thetransistor of claim 1 wherein the ferroelectric insulator material isdiscontinuous between edges of the control gate parallel a straight-linedirection of current flow in the channel material.
 7. The transistor ofclaim 1 wherein the ferroelectric insulator material is closer to thecharge-storage material than is the non-ferroelectric insulatormaterial.
 8. The transistor of claim 1 wherein the non-ferroelectricinsulator material is closer to the charge-storage material than is theferroelectric insulator material.
 9. The transistor of claim 1 whereinthe ferroelectric insulator material is directly against the controlgate.
 10. The transistor of claim 1 wherein the non-ferroelectricinsulator material is directly against the control gate.
 11. Thetransistor of claim 1 wherein the ferroelectric insulator material isdirectly against the charge-storage material.
 12. The transistor ofclaim 1 wherein the non-ferroelectric insulator material is directlyagainst the charge-storage material.
 13. The transistor of claim 1wherein the ferroelectric insulator material is sandwiched between tworegions of the non-ferroelectric insulator material along a directionthat is parallel a straight-line direction of current flow in thechannel material.
 14. The transistor of claim 13 wherein theferroelectric insulator material is directly against thenon-ferroelectric insulator material of each of the two regions.
 15. Thetransistor of claim 1 wherein the non-ferroelectric insulator materialis sandwiched between two regions of the ferroelectric insulatormaterial along a direction that is parallel a straight-line direction ofcurrent flow in the channel material.
 16. The transistor of claim 15wherein the non-ferroelectric insulator material is directly against theferroelectric insulator material of each of the two regions.
 17. Thetransistor of claim 1 being elevationally extending.
 18. The transistorof claim 17 being vertical or within 10° of vertical.
 19. The transistorof claim 1 being horizontal or within 10° of horizontal.
 20. Aprogrammable charge-storage transistor comprising: channel materialextending vertically or within 10° of vertical; insulativecharge-passage material; charge-storage material; a control gate; andcharge-blocking material between the charge-storage material and thecontrol gate, the charge-blocking material comprising: anon-ferroelectric insulator material; a ferroelectric insulatormaterial; and the ferroelectric insulator material and thenon-ferroelectric insulator material being directly against one another,the ferroelectric insulator material being thinner than thenon-ferroelectric insulator material.
 21. The transistor of claim 20wherein the ferroelectric insulator material is continuous between edgesof the control gate parallel a straight-line direction of current flowin the channel material.
 22. An array of elevationally-extending stringsof memory cells, comprising: a stack comprising vertically-alternatinginsulative tiers and wordline tiers, the wordline tiers comprisingcontrol-gate material having terminal ends corresponding to control-gateregions of individual memory cells, charge-storage material of theindividual memory cells extending elevationally along individual of thecontrol-gate regions; charge-blocking material of the individual memorycells extending elevationally along the individual control-gate regionsbetween the charge-storage material and the individual control-gateregions, the charge-blocking material comprising: a non-ferroelectricinsulator material; and a ferroelectric insulator material; transistorchannel material of the individual memory cells extending elevationallyalong the charge-storage material; and insulative charge-passagematerial extending elevationally along the charge-storage materialbetween the transistor channel material and the charge-storage material.23. The array of claim 22 wherein the ferroelectric insulating materialis directly above and directly below the charge-storage material in theindividual memory cells.
 24. The array of claim 23 wherein theferroelectric insulating material is directly against a top and a bottomof the charge-storage material in the individual memory cells.
 25. Thearray of claim 22 wherein the ferroelectric insulating material isneither directly above nor directly below the charge-storage material inthe individual memory cells.
 26. The array of claim 22 wherein thenon-ferroelectric insulating material is directly above and directlybelow the charge-storage material in the individual memory cells. 27.The array of claim 26 wherein the non-ferroelectric insulating materialis directly against a top and a bottom of the charge-storage material inthe individual memory cells.
 28. The array of claim 22 wherein thenon-ferroelectric insulating material is neither directly above nordirectly below the charge-storage material in the individual memorycells.
 29. The array of claim 22 wherein the ferroelectric insulatingmaterial is directly above and directly below the control-gate materialin the individual memory cells.
 30. The array of claim 29 wherein theferroelectric insulating material is directly against a top and a bottomof the control-gate material in the individual memory cells.
 31. Amethod of forming an array of elevationally-extending strings of memorycells, the method comprising: forming a stack comprisingvertically-alternating tiers of different composition first and secondmaterials, the first material being insulative; formingelevationally-extending channel openings into the alternating tiers;forming first charge-blocking insulator material in the channel openingselevationally along the alternating tiers; forming charge-storagematerial in the channel openings elevationally along the alternatingtiers and the first charge-blocking insulator material; forminginsulative charge-passage material in the channel openings elevationallyalong the alternating tiers and the charge-storage material; formingtransistor channel material in the channel openings elevationally alongthe alternating tiers and the insulative charge-passage material;removing at least some of the second material from the stack; formingsecond charge-blocking insulator material laterally proximate the firstcharge-blocking insulator material, the second charge-blocking insulatormaterial being of different composition from that of the firstcharge-blocking insulator material, one of the first charge-blockinginsulator material or the second charge-blocking insulator materialcomprising a non-ferroelectric insulator material, the other of thefirst charge-blocking insulator material or the second charge-blockinginsulator material comprising a ferroelectric insulator material; andforming control-gate material laterally over the second charge-blockinginsulator material, the control-gate material having terminal endscorresponding to control-gate regions of individual memory cells. 32.The method of claim 31 comprising forming the first charge-blockinginsulator material to comprise the non-ferroelectric insulator material,and forming the second charge-blocking insulator material to comprisethe ferroelectric insulator material.
 33. The method of claim 32 whereinthe ferroelectric insulating material is directly above and directlybelow the control-gate material in the individual memory cells in afinished construction.
 34. The method of claim 33 wherein theferroelectric insulating material is directly against a top and a bottomof the control-gate material in the individual memory cells in afinished construction.
 35. The method of claim 31 comprising forming thefirst charge-blocking insulator material to comprise the ferroelectricinsulator material, and forming the second charge-blocking insulatormaterial to comprise the non-ferroelectric insulator material.
 36. Themethod of claim 31 comprising forming the second charge-blockinginsulator material directly against the first charge-blocking insulatormaterial.